Reactive Ion Etcher
Status: | Standard operating procedures | Available processes | Reserve the tool
Training prerequisites: General cleanroom training and material compatibility (see SOP) Training contact: Arman Tuigynbek Technical contact: Arman Tuigynbek, Zhanibek Balgin
Oxford Instruments PlasmaPro 80 RIE
- Plasma etching with fluorine chemistries
- Sample size - 4” (up to 6”)
- RF 13.56 MHz, 500W generator
- Substrate table temperature: from -10C to +30C
- Available gases: CHF3, CF4, SF6, O2, Ar
- Available etch processes: SiO2, SiNx, Si, TiN
The following RIE processes are available:
- Si etching
- SiO2 etching
- SiNx etching
- TiN etching
