Plasma Enhanced Chemical Vapor Deposition system
Status: | Standard operating procedures | Reserve the tool
Training prerequisites: General cleanroom training Training contact: Arman Tuigynbek Technical contact: Arman Tuigynbek, Zhanibek Balgin
Oxford Instruments PlasmaPro 80 PECVD
- Plasma assisted deposition of dielectrics
- Sample size - 4” (up to 6”)
- RF 13.56 MHz, 500W generator
- LF X MHz, XW generator for stress-free thin film deposition
- End-point detection for chamber cleaning
- Available gases: 2% SiH4 in Ar, NH3, N2O, CF4, Ar
- Available deposition processes: SiO2, SiNx, amorphous Si
The following processes are available:
- Amorphous Si (150, 250 C)
- SiO2 (150, 250, 350 C)
- SiNx (150, 250, 350 C)
