Atomic Layer Deposition system
Status: Run by staff at the moment | Standard operating procedures (under development) | Reserve the tool
Training prerequisites: General cleanroom training and material compatibility (see SOP) Training contact: Arman Tuigynbek Technical contact: Arman Tuigynbek, Zhanibek Balgin
Oxford Instruments FlexAL PEALD
- Thermal and plasma deposition of thin films (max. 50 nm)
- Sample size: 4” (up to 6”)
- Inductively-coupled plasma (ICP) source for plasma-enhanced ALD (13.56 MHz generator, 600 Watt)
- Max. table temp: 550C
- Substrate bias option for direct ion energy control (“RF bias”)
- In situ ellipsometer (400 - 1000 nm)
- Six jacket heated precursors (plus a separate H2O input)
- Precursors available for: Al2O3, SiO2, WOx, MoOx, HfO2, ZrO2, HfxZr1-xO2, TiN
- Available gases: Ar, N2, H2, SF6
The following processes are available:
- SiO2
- WO3
- MoO3
- TiO2
- TiN
